| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4101 | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. | distributor | - | 2 | -65°C | 200°C | 178 K |
| 1N4101 | Nom zener voltage:8.2V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
| 1N4101 | 8.2V zener voltage regulator diode | Microsemi-Corporation | - | 2 | -65°C | 200°C | 83 K |
| 1N4101C | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. 2% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
| 1N4101D | 500mW low noise silicon zener diode. Nominal zener voltage 8.2V. 1% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
| 24101 | Bobbin wound surface mount inductor (unshielded type). Nominal inductance (1kHz, 100mV) 100uH | distributor | - | - | -40°C | 85°C | 100 K |
| 5962H9654101QXX | RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9654101QXX | RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| 5962H9654101QXX | RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish optional. Total dose 1E6 rads(Si). | distributor | Ceramic flatpack | 16 | -55°C | 125°C | 10 M |
| FJV4101R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
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