Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4102 | 500mW low noise silicon zener diode. Nominal zener voltage 8.7V. | distributor | - | 2 | -65°C | 200°C | 178 K |
1N4102 | Nom zener voltage:8.7V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
1N4102 | 8.7V zener voltage regulator diode | Microsemi-Corporation | - | 2 | -65°C | 200°C | 83 K |
1N4102C | 500mW low noise silicon zener diode. Nominal zener voltage 8.7V. 2% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
1N4102D | 500mW low noise silicon zener diode. Nominal zener voltage 8.7V. 1% tolerance. | distributor | - | 2 | -65°C | 200°C | 178 K |
EM4102 | 125KHz, 64 bit read only CID for direct coil connection | distributor | - | | - | - | 133 K |
FJV4102R | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 55 K |
TC514102AJ-60 | 60 ns, 1-bit generation dynamic RAM | Toshiba | SOJ | 26 | 0°C | 70°C | 601 K |
TC514102AP-60 | 60 ns, 1-bit generation dynamic RAM | Toshiba | DIP | 18 | 0°C | 70°C | 601 K |
TC514102AZ-60 | 60 ns, 1-bit generation dynamic RAM | Toshiba | ZIP | 20 | 0°C | 70°C | 601 K |
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