| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1410454 | Bobbin type inductor. Inductance (+-10% at 1kHz) 100uH. | distributor | - | 2 | -40°C | 85°C | 91 K |
| 1410460 | Bobbin type inductor. Inductance (+-10% at 1kHz) 100uH. | distributor | - | 2 | -40°C | 85°C | 91 K |
| 1410478 | Bobbin type inductor. Inductance (+-10% at 1kHz) 100uH. | distributor | - | 2 | -40°C | 85°C | 91 K |
| IRFR4104 | N-channel MOSFET for fast switching applications, 40V, 42A | International-Rectifier | - | 3 | -55°C | 175°C | 182 K |
| IRFU4104 | N-channel MOSFET for fast switching applications, 40V, 42A | International-Rectifier | - | 3 | -55°C | 175°C | 182 K |
| KM416V4104BS-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BS-5 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-45 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-5 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
| KM416V4104BSL-6 | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power | Samsung-Electronic | TSOP II | 50 | 0°C | 70°C | 806 K |
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