| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E160411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E160411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
| K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 26 | 0°C | 70°C | 256 K |
| K4E170411D-B | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | SOJ | 24 | 0°C | 70°C | 256 K |
| K4E170411D-F | 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. | Samsung-Electronic | - | 26 | 0°C | 70°C | 256 K |
| RB411D | Schottky barrier diode | ROHM | SMD3 | 3 | - | - | 55 K |
| UCC39411D | LOW POWER SYNCHRONOUS BOOST CONVERTER | Texas-Instruments | - | 8 | 0°C | 70°C | 143 K |
| UCC39411DTR | LOW POWER SYNCHRONOUS BOOST CONVERTER | Texas-Instruments | D | 8 | 0°C | 70°C | 143 K |
| UNR411D | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 180 K |
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