Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4120 | Nom zener voltage:30.0V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
1N4121 | Nom zener voltage:33.0V; low level zener diode, low current: 250uA - low noise | distributor | - | - | - | - | 37 K |
KM41256AJ-15 | 256K x 1-bit DRAM, 150ns | Samsung-Electronic | LDCC | 18 | 0°C | 70°C | 988 K |
KM41256AP-10 | 256K x 1-bit DRAM, 100ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
KM41256AP-12 | 256K x 1-bit DRAM, 120ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
KM41256AP-15 | 256K x 1-bit DRAM, 150ns | Samsung-Electronic | DIP | 16 | 0°C | 70°C | 988 K |
R4124 | Spectral responce:300-650nm; between anode and cathode:1250Vdc; 0.03mA; photomultiplier tube | distributor | - | 13 | -80°C | 50°C | 19 K |
SMV1412-01 | 250mW; silicon hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 37 K |
SMV1412-06 | 250mW; silicon hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 37 K |
SMV1412-07 | 250mW; silicon hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 37 K |
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