| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LNJ412K8YRA | Surface mounting monocolor visible light emitting diode. Outline (1608mm Type) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 31 K |
| MAZ4120 | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 76 K |
| MAZ4120N | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 72 K |
| TISP4125F3D | Single Symmetrical Overvoltage TISP for 2 Wire Systems | Power-Innovations | D | - | - | - | 326 K |
| UNR4121 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR4122 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR4123 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR4124 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR412X | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
| UNR412Y | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 84 K |
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