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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N4130500mW low noise silicon zener diode. Nominal zener voltage 66V.distributor-2-65°C200°C178 K
1N4130C500mW low noise silicon zener diode. Nominal zener voltage 68V. 2% tolerance.distributor-2-65°C200°C178 K
1N4131500mW low noise silicon zener diode. Nominal zener voltage 75V.distributor-2-65°C200°C178 K
1N4131C500mW low noise silicon zener diode. Nominal zener voltage 75V. 2% tolerance.distributor-2-65°C200°C178 K
1N4133500mW low noise silicon zener diode. Nominal zener voltage 87V.distributor-2-65°C200°C178 K
1N4134500mW low noise silicon zener diode. Nominal zener voltage 91V.distributor-2-65°C200°C178 K
41330Toroidal surface mount inductor. Nominal inductance (10kHz rms 10mV AC) 33uH.distributor---40°C85°C172 K
41331Toroidal surface mount inductor. Nominal inductance (10kHz rms 10mV AC) 330uH.distributor---40°C85°C172 K
MC1413BPHigh voltage, high current darlington transistor arraysMotorolaDIP16-40°C85°C196 K
MC1413PHigh voltage, high current darlington transistor arraysMotorolaDIP16-20°C85°C196 K
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