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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N4151Signal diode. Breakdown voltage BV = 75V(IR = 5.0uA).distributor-2-65°C175°C11 M
HIM032415S3 W DC/DC HIM module with 9-36 V input, 15 V/200 mA outputdistributor-24-25°C71°C194 K
IRF3415LHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43AInternational-Rectifier-3-55°C175°C156 K
IRF3415SHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.042 Ohm, ID = 43AInternational-RectifierDDPak3-55°C175°C156 K
MM41501N4150 single diode. Min breakdown voltage BV=75Vdistributor---65°C200°C21 K
SD4150Surface mount 1N4150 diode. Reverse voltage VR=50V.distributor-3-55°C150°C17 K
SIM1-2415-SIL41 W DC/DC SIM-SIL module with 24 V input, 15 V/66 mA outputdistributorSIL44-20°C71°C62 K
SIM1-2415S-DIL81 W DC/Dc SIM-DIL module with 24 V input, 15 V/85 mA outputdistributorDIL88-20°C71°C61 K
SIM5-2415D3 W DC/DC SIM module with 24 V input, +/-15 V/+/-100 mA outputdistributorDIL24-20°C71°C117 K
SIM5-2415S3 W DC/DC SIM module with 24 V input, 15 V/200 mA outputdistributorDIL24-20°C71°C117 K
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