Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ACT-SF41632N-26P1C | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. | distributor | - | 66 | 0°C | 70°C | 182 K |
ACT-SF41632N-26P1I | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. | distributor | - | 66 | -40°C | 85°C | 182 K |
ACT-SF41632N-26P1M | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. Screened to the individual test methods of MIL-STD-883 | distributor | - | 66 | -55°C | 125°C | 182 K |
ACT-SF41632N-26P1Q | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. MIL-PRF-38534 compliant/SMD | distributor | - | 66 | - | - | 182 K |
ACT-SF41632N-26P1T | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 25(SRAM) / 60(FLASH) ns. | distributor | - | 66 | -55°C | 125°C | 182 K |
ACT-SF41632N-37P1C | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 35(SRAM) / 70(FLASH) ns. | distributor | - | 66 | 0°C | 70°C | 182 K |
ACT-SF41632N-37P1I | High speed 128Kx32 SRAM/512Kx32 FLASH multichip module. Speed 35(SRAM) / 70(FLASH) ns. | distributor | - | 66 | -40°C | 85°C | 182 K |
K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
K4S641632F-TC1H | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
K4S641632F-TC1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
K4S641632F-TL60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
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