| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| A416316BS-30 | 30ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | SOJ | 40 | 0°C | 70°C | 418 K |
| A416316BS-35 | 35ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | SOJ | 40 | 0°C | 70°C | 418 K |
| A416316BV-30 | 40ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | TSOP | 40 | 0°C | 70°C | 418 K |
| A416316BV-35 | 40ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | TSOP | 44 | 0°C | 70°C | 418 K |
| A416316BV-35 | 40ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | TSOP | 40 | 0°C | 70°C | 418 K |
| A416316BV-40 | 40ns 64K x 16 CMOS dynamic RAM with fast page moge | distributor | TSOP | 40 | 0°C | 70°C | 418 K |
| K4S641632F-TC50 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL1L | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S641632F-TL50 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 200MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
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