Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
KM416V1004AJ-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AJ-L7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | SOJ | 42 | 0°C | 70°C | 1 M |
KM416V1004AR-6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AR-F6 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AR-F7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AT-7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
KM416V1004AT-F7 | 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 1 M |
WED9LC6416V2010BI | SSRAM access 200MHz; 3.3V power supply; 128K x 32 SSRAM/4M x 32 SDRAM. External memory solution for texas instruments TMS320C6000 DSP | distributor | BGA | 153 | - | - | 370 K |
<< [8] [9] [10] [11] [12] 13 [14] [15] [16] [17] [18] >> |
---|