| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KA2418B | Tone ringer with bridge diode | Samsung-Electronic | - | 8 | -20°C | 70°C | 38 K |
| KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RK80 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| S1T2418G01-D0B0 | Tone ringer with bridge diode | Samsung-Electronic | - | 8 | -20°C | 70°C | 38 K |
| S1T2418G02-D0B0 | Tone ringer with bridge diode | Samsung-Electronic | - | 8 | -20°C | 70°C | 38 K |
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