| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DG418C/D | Improved, SPST, NO analog switch | Maxim-Integrated-Producs | Dice | - | 0°C | 70°C | 170 K |
| DG418CJ | Improved, SPST, NO analog switch | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 170 K |
| DG418CY | Improved, SPST, NO analog switch | Maxim-Integrated-Producs | SO | 8 | 0°C | 70°C | 170 K |
| DG418DJ | Improved, SPST, NO analog switch | Maxim-Integrated-Producs | Plastic DIP | 8 | -40°C | 85°C | 170 K |
| DG418DY | Improved, SPST, NO analog switch | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 170 K |
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
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