| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GS88418B-133 | 133MHz 9.5ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 798 K |
| GS88418B-133I | 133MHz 9.5ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 798 K |
| GS88418B-150 | 150MHz 9ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 798 K |
| GS88418B-150I | 150MHz 9ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 798 K |
| GS88418B-166 | 166MHz 8.5ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | 0°C | 70°C | 798 K |
| GS88418B-166I | 166MHz 8.5ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 798 K |
| GS88418B-180I | 180MHz 8ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 798 K |
| GS88418B-200I | 200MHz 7.5ns 512K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 119 | -40°C | 85°C | 798 K |
| LZ1418E100R | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 66 K |
| PZ1418B30U | 40 V, NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 72 K |
| << [29] [30] [31] [32] [33] 34 [35] [36] |
|---|
