| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AGM6420A-FBD-T | 0.3-6.5V; number of dots: 640 x 200dots; dot size:0.24 x 0.30mm; dot pitch:0.27 x 0.33mm; AZ display | distributor | - | - | 0°C | 50°C | 1 M |
| AGM6420A-FBS-T | 0.3-6.5V; number of dots: 640 x 200dots; dot size:0.24 x 0.30mm; dot pitch:0.27 x 0.33mm; AZ display | distributor | - | - | 0°C | 50°C | 1 M |
| AGM6420A-FTD-T | 0.3-6.5V; number of dots: 640 x 200dots; dot size:0.24 x 0.30mm; dot pitch:0.27 x 0.33mm; AZ display | distributor | - | - | 0°C | 50°C | 1 M |
| CR4202AA | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2: Vr = 190.0V, Vbo = 250.0V,max. Pins 1-3: Vr = 380.0V, Vbo = 500.0V,max. Ir = 1.0uA. Vt = 5.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
| CR4202AB | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2: Vr = 190.0V, Vbo = 250.0V,max. Pins 1-3: Vr = 380.0V, Vbo = 500.0V,max. Ir = 1.0uA. Vt = 5.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
| CR4202AC | TO-220 series Sibod, glass passivated junction, bi-directional. Pins 1-2&3-2: Vr = 190.0V, Vbo = 250.0V,max. Pins 1-3: Vr = 380.0V, Vbo = 500.0V,max. Ir = 1.0uA. Vt = 10.0V,typ. Ibo = 800.0mA. | distributor | - | 3 | -55°C | 175°C | 79 K |
| LD4200 | NEWPORT: 100-550Mb/sec data rate operation; 3.3V (+-5%) power suppply | distributor | - | - | - | - | 84 K |
| LTE42005S | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 44 K |
| LTE42008R | NPN microwave power transistor | Philips-Semiconductors | SOT | 3 | - | - | 78 K |
| SI4420DY | 30 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 254 K |
| << [61] [62] [63] [64] [65] 66 [67] [68] [69] [70] [71] >> |
|---|
