Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K4S643232E-TC60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232E-TL70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
K4S643232F-TC45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
K4S643232F-TC50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
K4S643232F-TI60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
K4S643232F-TI70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
K4S643232F-TL45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
K4S643232F-TL50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
K4S643232F-TP60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
K4S643232F-TP70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
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