| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AV1432E | 18 K, 14 sec complicate pure speech | distributor | - | 12 | -10°C | 60°C | 203 K |
| AV2432B | 3 V, single chip voice synthesizer 24 sec CMOS VLSI | distributor | - | 18 | 0°C | 70°C | 269 K |
| AV2432C | 3 V, single chip voice synthesizer 24 sec CMOS IC | distributor | - | 18 | 0°C | 70°C | 392 K |
| K4S560432E-NC75 | 64M x 4 SDRAM, LVTTL, 133MHz | Samsung-Electronic | sTSOP | 54 | 0°C | 70°C | 207 K |
| K4S560432E-NCL75 | 64M x 4 SDRAM, LVTTL, 133MHz | Samsung-Electronic | sTSOP | 54 | 0°C | 70°C | 207 K |
| K4S560432E-TC75 | 64M x 4 SDRAM, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
| K4S560432E-TCL75 | 64M x 4 SDRAM, LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 198 K |
| K5T6432YBM-T310 | 64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns | Samsung-Electronic | TBGA | 81 | -25°C | 85°C | 606 K |
| K5T6432YTM-T310 | 64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns | Samsung-Electronic | TBGA | 81 | -25°C | 85°C | 606 K |
| T35L6432B-10Q | 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter | distributor | QFP | 100 | 0°C | 70°C | 162 K |
| T35L6432B-10Q | 0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter | distributor | QFP | 100 | 0°C | 70°C | 162 K |
| << [119] [120] [121] [122] [123] 124 [125] [126] [127] [128] |
|---|
