Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
K4S280432B-TC/L10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432B-TC/L1L | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 109 K |
K4S280432M-TC/L10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L1H | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L1L | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S280432M-TC/L80 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 125 K |
K4S560432A-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
K4S560432A-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
K4S560432A-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
K4S560432A-TC/L80 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 127 K |
<< [24] [25] [26] [27] [28] 29 [30] [31] [32] [33] [34] >> |
---|