| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S560432B-TC/L1H | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L1L | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S560432B-TC/L75 | 16M x 4bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 130 K |
| K4S640432D-TC/L10 | 4M x 4bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 66 MHz (CL=2&3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| K4S640432D-TC/L1H | 4M x 4bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| K4S640432D-TC/L1L | 4M x 4bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| K4S640432D-TC/L75 | 4M x 4bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| K4S640432D-TC/L80 | 4M x 4bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 128 K |
| MAX432CPA | +-15V Chopper-stabilized operational amplifier. | Maxim-Integrated-Producs | Plastic DIP | 8 | 0°C | 70°C | 389 K |
| MAX432EPA | +-15V Chopper-stabilized operational amplifier. | Maxim-Integrated-Producs | Plastic DIP | 8 | -40°C | 85°C | 389 K |
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