Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
5962H3829435BNA | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
5962H3829435BNC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
5962H3829435BNX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | distributor | FlatPack | 28 | -55°C | 125°C | 100 K |
5962H3829435BXC | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
5962H3829435BXX | Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. | distributor | DIP | 28 | -55°C | 125°C | 100 K |
SDM9435A | 30V; 5.3A; 2.5W; dual enchanced mode field effect transistor (N and P - channel) | distributor | Surface mount | 8 | -55°C | 150°C | 359 K |
SDU9435A | 30V; 10A; 2.5W; N-channel enchanced mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 396 K |
SMV20435-01 | VBR:15V min; 250mW; surface mount 2043 series hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 35 K |
SMV20435-06 | VBR:15V min; 250mW; surface mount 2043 series hyperabrupt tuning diode | distributor | SOT23 | - | -55°C | 125°C | 35 K |
<< [19] [20] [21] [22] [23] 24 [25] [26] [27] [28] |
---|