| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GLT44108-40J4 | 40ns; 512K x 8 CMOS dynamic RAM with fast page mode | distributor | SOJ | 28 | 0°C | 70°C | 399 K |
| GLT44108-50J4 | 50ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 399 K |
| GLT44108-60J4 | 60ns; Ultra low power 128k x 8 CMOS SRAM | distributor | TSOP | 32 | -40°C | 85°C | 399 K |
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AN-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| K4R441869AN-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| K4R441869AN-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| MSP4418G | Multistandard sound processor | Micronas-Intermetall | PQFP | 64 | 0°C | 70°C | 570 K |
| MSP4418G | Multistandard sound processor | Micronas-Intermetall | PDIP | 64 | 0°C | 70°C | 570 K |
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