| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRF044SMD | 60V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 21 K |
| IRFN044SMD | 60V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
| KM44S32030T-G/F8 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz. | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 116 K |
| KM44S3203BT-G/F10 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/F8 | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/FA | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/FH | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| KM44S3203BT-G/FL | 8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). | Samsung-Electronic | TSOP (II) | 54 | 0°C | 70°C | 135 K |
| S-80744SN-D8-T1 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
| S-80744SN-D8-T2 | High-precision voltage detector | Seiko-Epson-Corporation | - | 5 | -30°C | 80°C | 2 M |
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