Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AN4505 | Heatsink | distributor | - | - | - | - | 116 K |
AN4506 | Heatsink | distributor | - | - | - | - | 116 K |
IRFP450A | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.40 Ohm, ID = 14 A | International-Rectifier | - | 3 | -55°C | 150°C | 101 K |
IRFP450N | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.37 Ohm, ID = 14 A | International-Rectifier | - | 3 | -55°C | 150°C | 121 K |
IW4502BN | Strobed hex inverter/buffer, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 188 K |
IW4502BN | Strobed hex inverter/buffer, high-voltage silicon-gate CMOS | distributor | Plastic DIP | 16 | -55°C | 125°C | 188 K |
MCO450-20IO1 | 2000V high power single thyristor module | distributor | - | 4 | -40°C | 140°C | 65 K |
MCO450-22IO1 | 2200V high power single thyristor module | distributor | - | 4 | -40°C | 140°C | 65 K |
MEO450-12DA | 1200V fast recovery epitaxial diode (FRED) module | distributor | - | 3 | -40°C | 150°C | 52 K |
RMPA2450-58 | 2.4-2.5 GHz GaAs power amplifier MMIC | distributor | SMD | 12 | -40°C | 100°C | 283 K |
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