| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CA1458E | High-gain operational amplifier | Harris-Semiconductor | DIP | 8 | 0°C | 70°C | 417 K |
| CA1458S | High-gain operational amplifier | Harris-Semiconductor | - | 8 | 0°C | 70°C | 417 K |
| CA1458T | High-gain operational amplifier | Harris-Semiconductor | - | 8 | 0°C | 70°C | 417 K |
| KF458B | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 177 K |
| KF458BS | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 397 K |
| KF458BV | 400MHz-500MHz Band(150ohm) | Korea-Electronics-Co--Ltd- | - | - | - | - | 397 K |
| LA4580M | 2-channel preamp + power amplifier for 3V headphone use | SANYO-Electric-Co--Ltd- | MFP | 20 | -20°C | 75°C | 355 K |
| M54585FP | 8-unit 500mA darlington transistor array with clamp diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 20 | -20°C | 75°C | 73 K |
| M54585P | 8-unit 500mA darlington transistor array with clamp diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | 18P4G | 18 | -20°C | 75°C | 73 K |
| M54587P | 8-unit 500mA darlington transistor array with clamp diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | 20P4 | 20 | -20°C | 75°C | 44 K |
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