Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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APT10045B2FLL | 1000V, 23A power MOS 7 transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 63 K |
APT10045B2LL | 1000V, 23A power MOS 7 transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 68 K |
APT20M45BVFR | 200V, 56A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 94 K |
APT20M45BVR | 200V, 56A power MOS V transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 92 K |
APT6045BN | 600V, 17A power MOS IV transistor | Advanced-Power-Technology-APT | - | 3 | -55°C | 150°C | 50 K |
MH16V7245BATJ-5 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 152 K |
MH16V7245BATJ-6 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 152 K |
MH16V7245BATJ-6 | 1207959552-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 152 K |
MH8V7245BAZTJ-5 | 603979776-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 147 K |
MH8V7245BAZTJ-6 | 603979776-bit synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 168 | 0°C | 70°C | 147 K |
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