| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4464US | Zener Voltage Regulator Diode | Microsemi-Corporation | - | - | - | - | 64 K |
| 1N6464US | Transient Voltage Suppressor | Microsemi-Corporation | - | - | - | - | 63 K |
| M4640-19 | Baseband processor for GSM application | distributor | BGA | - | -30°C | 85°C | 359 K |
| M4641-19 | Baseband processor for GSM application | distributor | BGA | - | -30°C | 85°C | 359 K |
| M4641-20 | Baseband processor for GSM application | distributor | BGA | - | -30°C | 85°C | 359 K |
| MC33464N-09ATR | Micropower undervoltage sensing circuit | Motorola | - | 5 | -30°C | 80°C | 107 K |
| MC33464N-20ATR | Micropower undervoltage sensing circuit | Motorola | - | 5 | -30°C | 80°C | 107 K |
| MC33464N-27ATR | Micropower undervoltage sensing circuit | Motorola | - | 5 | -30°C | 80°C | 107 K |
| MC33464N-30ATR | Micropower undervoltage sensing circuit | Motorola | - | 5 | -30°C | 80°C | 107 K |
| MSC23S4641E-8BS16 | 4,194,304-word x 64-bit synchronous dynamic RAM module (2bank) | distributor | DIP | 168 | 0°C | 70°C | 85 K |
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