| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AME1084BCCS | 5A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 108 K |
| AME1084BCDT | 5A low dropout positive voltage regulator | distributor | - | 3 | 0°C | 125°C | 108 K |
| IRG4BC10K | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 158 K |
| IRG4BC10KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
| IRG4BC10S | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 157 K |
| IRG4BC10SD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 210 K |
| IRG4BC10SD-L | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | - | 3 | -55°C | 150°C | 217 K |
| IRG4BC10SD-S | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A | International-Rectifier | DDPak | 3 | -55°C | 150°C | 217 K |
| IRG4BC10UD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.150V @ VGE = 15V, IC = 5.0A, tf(typ) = 140ns. | International-Rectifier | - | 3 | -55°C | 150°C | 184 K |
| IRG4BC15MD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.88V @ VGE = 15V, IC = 8.5A | International-Rectifier | - | 3 | -55°C | 150°C | 256 K |
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