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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C4M4F1-50JC5V 4M x 4 CM0S DRAM (fast page mode), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ260°C70°C273 K
AS4C4M4F1-50JI5V 4M x 4 CM0S DRAM (fast page mode), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ26-40°C85°C273 K
AS4C4M4F1-50TC5V 4M x 4 CM0S DRAM (fast page mode), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP260°C70°C273 K
AS4C4M4F1-50TI5V 4M x 4 CM0S DRAM (fast page mode), 50ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP26-40°C85°C273 K
AS4C4M4F1-60JC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ260°C70°C273 K
AS4C4M4F1-60JI5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ26-40°C85°C273 K
AS4C4M4F1-60TC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP260°C70°C273 K
AS4C4M4F1-60TC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP260°C70°C273 K
K4F151611D-J1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.Samsung-ElectronicSOJ420°C70°C528 K
K4F171611D-J1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle.Samsung-ElectronicSOJ420°C70°C528 K
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