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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M2V64S20BTP-1064M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S20BTP-10L64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S20BTP-864M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M2V64S20BTP-8A64M synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP640°C70°C674 K
M5M4V64S20ATP-1264M (4-bank x 4194304-word x 4-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP540°C70°C1 M
OR2C04A-4S208ORCA feild-programmable gate array. Voltage 5.0 V.distributorSQFP2080°C70°C3 M
OR2C04A-4S208ORCA feild-programmable gate array. Voltage 5.0 V.distributorSQFP22080°C70°C3 M
OR2C04A-4S208IORCA feild-programmable gate array. Voltage 5.0 V.distributorSQFP208-40°C85°C3 M
OR2C04A-4S208IORCA feild-programmable gate array. Voltage 5.0 V.distributorSQFP2208-40°C85°C3 M
OR2C06A-4S208ORCA feild-programmable gate array. Voltage 5.0 V.distributorSQFP2080°C70°C3 M
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