| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 54S416T-5 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| 54S416T-6 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| 54S416T-7 | High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA | distributor | TSOP | 54 | 0°C | 70°C | 1 M |
| ARF674S45 | 4500 V, 945 A, 15 kA fast recovery diode | distributor | - | 2 | -30°C | 125°C | 232 K |
| GNR34S431K | Varistor. Max allowable voltage: ACrms=275V, DC=350V. Varistor voltage 387-473V. | distributor | - | 2 | -40°C | 85°C | 68 K |
| GNR34S471K | Varistor. Max allowable voltage: ACrms=300V, DC=385V. Varistor voltage 423-517V. | distributor | - | 2 | -40°C | 85°C | 68 K |
| MDE-34S431K | 430V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | distributor | - | 2 | - | - | 88 K |
| MDE-34S471K | 470V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | distributor | - | 2 | - | - | 88 K |
| SMS24S4R1R1R0R0 | Highly programmable voltage supervisory circuit | distributor | SOIC | 8 | -40°C | 85°C | 446 K |
| TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
| TBP24S41MJ | Standard and low power programmable read-only memory, 1024 x 4 bit, 20ns | Texas-Instruments | CERDIP | 18 | 0°C | 70°C | 1 M |
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