| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GNR34S561K | Varistor. Max allowable voltage: ACrms=350V, DC=460V. Varistor voltage 504-616V. | distributor | - | 2 | -40°C | 85°C | 68 K |
| K4S560832C-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832C-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP | 54 | 0°C | 70°C | 113 K |
| K4S560832D-TC/L1H | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| K4S560832D-TC/L1L | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 100MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| K4S560832D-TC/L75 | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| K4S560832D-TC/L7C | 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 118 K |
| MDE-34S561K | 560V; max peak current:40000A; Tmax=12; metal oxide varistor. High energy series 34mm single square | distributor | - | 2 | - | - | 88 K |
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