| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 524V13 | Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. | distributor | - | 2 | -40°C | 85°C | 27 K |
| 524V15 | Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. | distributor | - | 2 | -40°C | 85°C | 27 K |
| 524V17 | Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. | distributor | - | 2 | -40°C | 85°C | 27 K |
| KM44V1000DJ-7 | 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | SOJ | 20 | 0°C | 70°C | 372 K |
| KM44V1000DJL-6 | 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | SOJ | 20 | 0°C | 70°C | 372 K |
| KM44V1000DJL-7 | 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns | Samsung-Electronic | SOJ | 20 | 0°C | 70°C | 372 K |
| M5M4V16169DRT-8 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
| M5M4V16G50DFP-10 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
| M5M4V16G50DFP-12 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
| M5M4V16G50DFP-8 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
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