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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AS4C4M4F1-60JC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ260°C70°C273 K
AS4C4M4F1-60JI5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic SOJ26-40°C85°C273 K
AS4C4M4F1-60TC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP260°C70°C273 K
AS4C4M4F1-60TC5V 4M x 4 CM0S DRAM (fast page mode), 60ns RAS access timeAlliance-Semiconductor-Corporationplastic TSOP260°C70°C273 K
MT4C4M4E8DJ-54Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 50nsdistributorSOJ240°C70°C291 K
MT4C4M4E8DJ-64Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 60nsdistributorSOJ240°C70°C291 K
MT4C4M4E8DJS-54Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 50nsdistributorSOJ240°C70°C291 K
MT4C4M4E8DJS-64Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 60nsdistributorSOJ240°C70°C291 K
MT4C4M4E8TG-54Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 50nsdistributorTSOP240°C70°C291 K
MT4C4M4E8TG-64Meg x 4 banks, EDO DRAM, 5.0V, standard refresh, 60nsdistributorTSOP240°C70°C291 K
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