| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTG24N60D1 | 24A, 600V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 32 K |
| HGTG24N60D1D | 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode | Intersil-Corporation | - | - | - | - | 35 K |
| IXSH24N60 | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
| IXSH24N60A | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
| IXSH24N60U1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 37 K |
| MGP14N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 125 K |
| MGP14N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 121 K |
| MGP4N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 146 K |
| MGW14N60ED | Insulated Gate Bipolar Transistor | ON-Semiconductor | - | 3 | - | - | 154 K |
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