| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 4N600S | 600V 4.0A N-channel field effect transistor | distributor | - | 3 | 0°C | 150°C | 36 K |
| FQA24N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 633 K |
| FQB4N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 539 K |
| FQI4N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 539 K |
| FQP4N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 530 K |
| FQPF4N60 | 600V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 550 K |
| PHB4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| PHP4N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 80 K |
| SSP4N60B | 600V, 4A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 890 K |
| SSS4N60B | 600V, 4A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 890 K |
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