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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MGP14N60EInsulated gate bipolar transistorMotorola-3-55°C150°C125 K
MGP14N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--121 K
MGP4N60EInsulated Gate Bipolar Transistor N-ChannelON-Semiconductor-3--120 K
MGP4N60EDInsulated Gate Bipolar Transistor with Anti-Parallel Diode N-ChannelON-Semiconductor-3--146 K
MGW14N60EDInsulated Gate Bipolar TransistorON-Semiconductor-3--154 K
PHB4N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C80 K
PHB4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C80 K
PHB4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT4043-55°C150°C80 K
PHP4N60E600 V, power MOS transistor avalanche energy ratedPhilips-SemiconductorsSOT3-55°C150°C80 K
PHP4N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsSOT783-55°C150°C80 K
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