Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N3501L | Chip: geometry 5620; polarity NPN | distributor | - | - | - | - | 32 K |
CHA5010b99F/00 | X band driver amplifier | distributor | Chip | 14 | -25°C | 70°C | 54 K |
GBPC3501W | Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 35 A. | distributor | GBPC35W | 4 | -55°C | 150°C | 18 K |
KBPC1501W | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 15 A. | distributor | KBPC15W | 4 | -55°C | 150°C | 17 K |
KBPC2501W | Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 25 A. | distributor | KBPC25W | 4 | -55°C | 150°C | 17 K |
LH1501A | High voltage, photo MOS relay. | distributor | SMD | 6 | -40°C | 85°C | 168 K |
ME501610 | 1600V, 100A general purpose 3-phase bridge diode | distributor | - | - | - | - | 68 K |
P5010 | High reliability photocoupler. | distributor | DIP | 6 | -30°C | 100°C | 108 K |
R5011215XXWA | 1200V, 150A general purpose single diode | distributor | - | - | - | - | 502 K |
R5011410XXWA | 1400V, 100A general purpose single diode | distributor | - | - | - | - | 502 K |
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