| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5060 | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 52 K |
| 1N5060GP | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 64 K |
| 1N5061 | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 52 K |
| 1N5061GP | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 64 K |
| 1N5062 | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 52 K |
| 1N5062GP | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 64 K |
| 2SC5066FT | Silicon NPN epitaxial planar type for VHF-UHF low noise amplifier application | Toshiba | - | 3 | - | - | 81 K |
| FX506LG | Mobile radio audio processor | Consumer-Microcircuits-Limited | PEBC | 24 | -30°C | 70°C | 205 K |
| FX506LS | Mobile radio audio processor | Consumer-Microcircuits-Limited | PLCC | 24 | -30°C | 70°C | 205 K |
| FX506P | Mobile radio audio processor | Consumer-Microcircuits-Limited | DIP | 24 | -30°C | 70°C | 205 K |
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