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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5086Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW.distributor-30°C150°C76 K
2N5087Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW.distributor-30°C150°C76 K
2N5088Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C45 K
2N5089Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C80 K
BU508DNPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 8Amp, 1500V, 125Watt.distributor-3-65°C150°C48 K
GBPC1508WHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 15 A.distributor-4-50°C150°C42 K
GBPC1508WHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 15 A.distributor-4-50°C150°C42 K
GBPC2508WHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 25 A.distributor-4-50°C150°C40 K
GBPC3508WHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current for resistive load at Tc=55degC 35 A.distributor-4-50°C150°C40 K
RBV2508D800 V, 25 A, silicon bridge rectifierdistributorRBV254-40°C150°C19 K
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