Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2N5087 | 50 V, PNP general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
2N5088 | 35 V, NPN general purpose transistor | Philips-Semiconductors | - | 3 | -65°C | 150°C | 49 K |
AR508LTS06 | 600 V, 6000 A, 55 kA rectifier diode | distributor | - | 2 | -30°C | 190°C | 182 K |
AR508PCS06 | 600 V, 6000 A, 55 kA rectifier diode | distributor | Plastic | 2 | -30°C | 190°C | 182 K |
BU2508A | 1500 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 58 K |
BU2508AW | 1500 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 61 K |
NTE5089A | Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 51V. Zener test current Izt = 5.0mA. | distributor | - | 2 | - | - | 30 K |
SB1508W | 800 V, 15.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 199 K |
SB2508W | 800 V, 25.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 199 K |
SB3508W | 800 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
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