| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM450HA-5F | 450 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 44 K |
| GP1A50HR | OPIC photointerrupter | Sharp | __ | 5 | -25°C | 85°C | 82 K |
| QM50HA-H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 61 K |
| QM50HA-HB | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 77 K |
| QM50HY-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 68 K |
| RM50HG-12S | 50 Amp fast recovery diode module for high switching use, non-insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 25 K |
| S-81350HG-KD-T1 | High-precision voltage regulator | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 1 M |
| S-81350HG-KD-T2 | High-precision voltage regulator | Seiko-Epson-Corporation | - | 3 | -30°C | 80°C | 1 M |
| SML50H19 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO258 | - | - | - | 26 K |
| SML50H24 | 500V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | TO258 | - | - | - | 26 K |
| [1] [2] [3] [4] [5] 6 [7] [8] [9] [10] |
|---|
