| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| IXRH50N100 | 1000V IGBT with reverse blocking capability | distributor | - | 3 | -55°C | 150°C | 43 K |
| LND150N3 | 500V N-channel depletion-mode MOSFET | distributor | - | 3 | -55°C | 150°C | 88 K |
| LND150N8 | 500V N-channel depletion-mode MOSFET | distributor | - | 3 | -55°C | 150°C | 88 K |
| LND150ND | 500V N-channel depletion-mode MOSFET | distributor | Die | 3 | -55°C | 150°C | 88 K |
| VN0550N3 | 500V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 468 K |
| VN1550NW | 500V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 431 K |
| VN2450N3 | 500V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
| VN2450N8 | 500V N-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 457 K |
| VN2450NW | 500V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 457 K |
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