| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STB50NE08 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 95 K |
| STB50NE10 | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STP50N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP50N06FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
| STP50N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP50N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP50NE08 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 95 K |
| STW50N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 94 K |
| VNW50N04 | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 135 K |
| VNW50N04A | OMNIFET FULLY AUTOPROTECTED POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
| [1] 2 [3] [4] [5] [6] [7] [8] [9] [10] |
|---|
