| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| P50N02LS | 25V; 55A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 45 K |
| STE250N06 | Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV | SGS-Thomson-Microelectronics | - | - | - | - | 330 K |
| VP0550N3 | 500V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 447 K |
| VP1550NW | 90V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 431 K |
| VP2450N3 | 500V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 95 K |
| VP2450N8 | 500V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 95 K |
| VP2450ND | 500V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 95 K |
| VT50N1 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
| VT50N2 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
| VT50N3 | Photoconductive cell | distributor | - | 2 | -40°C | 75°C | 1 M |
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