| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB50N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT404 | - | - | - | 80 K |
| PHB50N06LT | 55 V, TrenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHD50N06LT | TrenchMOS transistor Logic level FET | Philips-Semiconductors | SOT428 | - | - | - | 80 K |
| PHD50N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 65 K |
| PHP50N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 65 K |
| RF1S50N06LESM | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
| RFG50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
| RFP50N06LE | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 412 K |
| STP50N06L | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP50N06LFI | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
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