| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM150TF-12H | 150 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 53 K |
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM150TU-12F | 150A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM50TF-12H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -40°C | 150°C | 49 K |
| CM50TF-24H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 57 K |
| CM50TF-28H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 19 | -40°C | 150°C | 57 K |
| CM50TU-24F | 50A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 81 K |
| CM50TU-24H | 50 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 15 | -40°C | 150°C | 56 K |
| QM50TB-2H | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 86 K |
| QM50TF-HB | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 86 K |
| << [29] [30] [31] [32] [33] 34 [35] [36] [37] [38] [39] >> |
|---|
