| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQB50N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 648 K |
| FQB50N06L | 60V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 654 K |
| MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 289 K |
| MTB50N06V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 289 K |
| OM50N06SA | 60V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 60 K |
| OM50N06ST | 60V ultra low power MOSFET | distributor | - | 3 | -55°C | 150°C | 60 K |
| PHB50N06LT | 55 V, TrenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHD50N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 65 K |
| PHP50N06 | 60 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 54 K |
| PHP50N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 65 K |
| STE250N06 | Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV | SGS-Thomson-Microelectronics | - | - | - | - | 330 K |
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