| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| TC551001CFI-70 | 131,072- word by 8-bit static RAM, 70ns | Toshiba | SOP | 32 | -40°C | 85°C | 588 K |
| TC551001CP-85 | 131,072-word by 8 bit static RAM, access time 85ns | Toshiba | DIP | 32 | 0°C | 70°C | 547 K |
| TC551001CP-85 | 131,072-word by 8 bit static RAM, access time 85ns | Toshiba | DIP | 32 | 0°C | 70°C | 547 K |
| TC551001CP-85L | 131,072-word by 8 bit static RAM, access time 85ns | Toshiba | DIP | 32 | 0°C | 70°C | 547 K |
| TC551001CPI-70L | 131,072- word by 8-bit static RAM, 70ns, low power | Toshiba | DIP | 32 | -40°C | 85°C | 588 K |
| TC551001CPI-85L | 131,072- word by 8-bit static RAM, 85ns, low power | Toshiba | DIP | 32 | -40°C | 85°C | 588 K |
| TC551001CSRI-85L | 131,072- word by 8-bit static RAM, 85ns, low power | Toshiba | TSOP | 32 | -40°C | 85°C | 588 K |
| TN2510ND | 40V N-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 478 K |
| TP2510N8 | 100V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 456 K |
| TP2510ND | 100V P-channel enhancement-mode vertical DMOS FET | distributor | Die | 3 | -55°C | 150°C | 456 K |
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