| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE5102A | Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 170V. Zener test current Izt = 1.5mA. | distributor | - | 2 | - | - | 30 K |
| NTE5103A | Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 180V. Zener test current Izt = 1.4mA. | distributor | - | 2 | - | - | 30 K |
| NTE5105A | Zener diode, 1 watt, +-5% tolerance. Nominal zener voltage Vz = 200V. Zener test current Izt = 1.3mA. | distributor | - | 2 | - | - | 30 K |
| NTE65101 | Integrated circuit. 256 x 4 bit static RAM (SRAM). | distributor | DIP | 22 | -40°C | 85°C | 30 K |
| PDSP16510A | 0.5-7.0V; 18mA stand alone FFT processor | distributor | PGA | 84 | - | - | 271 K |
| PDSP16510AMAAC1R | 0.3-7.0V; 18mA; stand alone FFT processor | distributor | PGA | 100 | - | - | 94 K |
| PDSP16510AMAGCPR | 0.3-7.0V; 18mA; stand alone FFT processor | distributor | QFP | 100 | - | - | 94 K |
| SB1510W | 1000 V, 15.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 199 K |
| SB2510W | 1000 V, 25.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 199 K |
| SB3510W | 1000 V, 35.0 A silicon bridge | distributor | SB | 4 | -65°C | 150°C | 205 K |
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