| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HYB5118165BJ-70 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 269 K |
| HYB5118165BSJ-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 192 K |
| HYB5118165BSJ-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 42 | 0°C | 70°C | 192 K |
| HYB5118165BST-50 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 192 K |
| HYB5118165BST-60 | 1M x 16bit EDO-DRAM | Infineon-formely-Siemens | - | 50 | 0°C | 70°C | 192 K |
| MAZ5110 | Silicon planer type zener diode | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 56 K |
| UNR5110 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR5110 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR5111 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
| UNR5112 | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 235 K |
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